发明名称 Semiconductor characteristics and geometry - of p-n junctions improvement
摘要 <p>Semiconductor slices which have been subjected to the normal mechanical handling processes such as lapping and polishing are then further cleaned to remove enough material from each slice that all impurities introduced by the mechanical processes are removed before that treatment takes place. It may be carried out chemical etch polishing, or approx. 20mu m may be ground from each side using corundum or silicon carbide and diamond paste.</p>
申请公布号 DE2009475(A1) 申请公布日期 1970.10.01
申请号 DE19702009475 申请日期 1970.02.28
申请人 发明人
分类号 H01L21/304;H01L21/306 主分类号 H01L21/304
代理机构 代理人
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