| 摘要 |
PURPOSE:To realize remarkable improvement in the yield of an integrated circuit on a quartz substrate by providing a partially thick silicon splashing preventive band of polysilicon between the devices. CONSTITUTION:After forming a polysilicon plashing preventive band 4 with polysilicon on a quartz substrate 1, the polysilicon 2 is stacked on the entire surface including the silicon splashing preventing band 4. In the laser recrystallization process, when the laser scanning is not carried out, it the silicon splashes by some reason, for example, at the point A, such splashing is continued after the point A. When the laser scanning comes to the silicon splashing preventive band 4, the polysilicon film is very thicker in this region than the other region. Therefore, since the dissolving condition of polysilicon is suppressed, splashing of siliconstops and after the point B, stable recrystallization can be conducted. Thereby, the manufacture yield can be improved remarkably.
|
