发明名称 MOSFET with temperature protection
摘要 Between the gate and source electrodes (7, 8) of a MOSFET (1), a switching element (2) which is thermally coupled to the MOSFET (1) is connected which switches off the MOSFET (1) when a critical temperature is reached. The switching element generates a temperature-dependent signal by means of which a device (3) is controlled. The device (3) switches on a voltage reducing element located between the gate and source electrodes (7, 8) of the MOSFET (1) when a temperature is reached which is lower than the critical temperature. As a result, the gate-source voltage of the MOSFET and thus the current flowing through it are reduced. The temperature rise is slowed down. <IMAGE>
申请公布号 DE4305038(A1) 申请公布日期 1994.08.25
申请号 DE19934305038 申请日期 1993.02.18
申请人 SIEMENS AG, 80333 MUENCHEN, DE 发明人 TIHANYI, JENOE, DR., 8000 MUENCHEN, DE
分类号 H03K17/08;H01L27/02;H03K17/0812;H03K17/14;(IPC1-7):H01L23/58 主分类号 H03K17/08
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