发明名称 |
MOSFET with temperature protection |
摘要 |
Between the gate and source electrodes (7, 8) of a MOSFET (1), a switching element (2) which is thermally coupled to the MOSFET (1) is connected which switches off the MOSFET (1) when a critical temperature is reached. The switching element generates a temperature-dependent signal by means of which a device (3) is controlled. The device (3) switches on a voltage reducing element located between the gate and source electrodes (7, 8) of the MOSFET (1) when a temperature is reached which is lower than the critical temperature. As a result, the gate-source voltage of the MOSFET and thus the current flowing through it are reduced. The temperature rise is slowed down. <IMAGE>
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申请公布号 |
DE4305038(A1) |
申请公布日期 |
1994.08.25 |
申请号 |
DE19934305038 |
申请日期 |
1993.02.18 |
申请人 |
SIEMENS AG, 80333 MUENCHEN, DE |
发明人 |
TIHANYI, JENOE, DR., 8000 MUENCHEN, DE |
分类号 |
H03K17/08;H01L27/02;H03K17/0812;H03K17/14;(IPC1-7):H01L23/58 |
主分类号 |
H03K17/08 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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