Doping method with small penetration depth for solid semiconductor bodies

摘要

A method is described for generating doped layers with very low penetration depth in semiconductor bodies, preferably silicon wafers, with low thermal stressing of the semiconductor crystal. The semiconductor bodies are brought into contact with a medium which contains the dopants and forms a surface layer. By low-temperature annealing between 300 and 450 DEG C the dopant penetrates to depths of less than 200 nm. After removal of the doping-material source layer brief annealing is carried out at increased temperatures.