发明名称 |
INSULATOR FOR INTEGRATED CIRCUIT AND PROCESS |
摘要 |
An insulator for covering an interconnection wiring level in a surface thereof on a semiconductor substrate containing semiconductor devices formed by curing a flowable oxide layer and annealing. The annealing is carried out in the presence of hydrogen and aluminum to obtain a dielectric constant of the oxide layer to a value below 3.2. Also provided is electrical insulation between neighboring devices using the flowable oxide which is cured and annealed. In this case, the annealing can be carried out in hydrogen with or without the presence of aluminum. <IMAGE> |
申请公布号 |
KR0160830(B1) |
申请公布日期 |
1999.02.01 |
申请号 |
KR19950043859 |
申请日期 |
1995.11.27 |
申请人 |
INTERNATIONAL BUSINESS MACHINES CORPORATION |
发明人 |
COHEN, STEPHAN ALAN;MCGAHAY, VINCENT JAMES;UTTECHT, RONALD ROBERT |
分类号 |
H01L21/768;H01L21/316;H01L21/762;H01L23/522;H01L23/532;(IPC1-7):H01L21/31 |
主分类号 |
H01L21/768 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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