发明名称 Semiconductor memory device having dynamic data amplifier circuit capable of reducing power dissipation
摘要 In a semiconductor memory device including a pair of data input/output lines, a data amplifier circuit amplifies voltages at the data input/output lines, and a data maintaining circuit maintains output signals of the data amplifier circuit. A data determination circuit, generates a data determination signal after the data maintaining circuit manintains the output signals of the data amplifier circuit and transmits the data transmitting the data determination signal to the data amplifier circuit, thus suspending the operation of the data amplifier circuit.
申请公布号 US6009020(A) 申请公布日期 1999.12.28
申请号 US19990266731 申请日期 1999.03.12
申请人 NEC CORPORATION 发明人 NAGATA, KYOICHI
分类号 G11C11/417;G11C7/10;G11C11/409;(IPC1-7):G11C7/00 主分类号 G11C11/417
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