发明名称 Parametric test system and method
摘要 A system and method for reducing voltage stabilization time in a leakage current test system, and thereby reducing the time for measuring leakage currents in the I/O pins of an IC chip including CMOS DRAMs is disclosed. The method and system of the present invention accelerates leakage current testing time by precharging the capacitance of the I/O pins under test to a voltage near the settled voltage level, before measuring leakage current at the I/O pin contact points of packaged IC chips and assembled IC modules, and indicating when an I/O pin is defective.
申请公布号 US6008664(A) 申请公布日期 1999.12.28
申请号 US19980033285 申请日期 1998.03.02
申请人 TANISYS TECHNOLOGY, INC. 发明人 JETT, ALLEN;LAWRENCE, ARCHER R.
分类号 G01R19/00;(IPC1-7):G01R31/02;G01R31/26 主分类号 G01R19/00
代理机构 代理人
主权项
地址