MAGNETORESISTIVE EFFECT ELEMENT AND MAGNETORESISTIVE EFFECT SENSOR

摘要

A magnetoresistive effect element having a lamination structure of a free magnetic layer, a non-magnetic layer in contact with the free magnetic layer, a pinned magnetic layer in contact with the non-magnetic layer, and an anti-ferromagnetic layer in contact with the pinned magnetic layer, wherein the product of a saturation magnetization of the pinned magnetic layer and a thickness of the pinned magnetic layer is not higher than 2x10-9 Txm. The pinned magnetic layer may include a lanthanide metal.