发明名称 ION IMPLANTER
摘要 <p>PROBLEM TO BE SOLVED: To make a silicon wafer absorb sufficiently heat energy accompanying heating, and absorb the thermal deformation of the silicon wafer. SOLUTION: The end surface of the outer peripheral side of a silicon wafer 30 is held by the holding portion fastened to a wafer holder 22, and the other end side of the silicon wafer 30 is held by a wafer supporting piece. The end portions of the wafer supporting piece are fastened to brackets via coil springs, metal fittings, and plate springs to absorb the expansion due to heat of the silicon wafer 30 by the deformations of the coil springs.</p>
申请公布号 JP2000183139(A) 申请公布日期 2000.06.30
申请号 JP19980359348 申请日期 1998.12.17
申请人 HITACHI LTD 发明人 TOMITA HIROYUKI;MERA KAZUO
分类号 H01J37/317;H01L21/265;H01L21/683;(IPC1-7):H01L21/68 主分类号 H01J37/317
代理机构 代理人
主权项
地址