| 摘要 |
<p>PROBLEM TO BE SOLVED: To prevent electrolytic corrosion, at intersections of gate wiring and drain wiring or at leader terminal parts, of active matrix substrates. SOLUTION: An intersection of gate wiring and drain wiring on an active matrix substrate 1 is film formed with the gate wiring 2, a gate insulating layer 3, a semiconductor layer 4, a contacting layer 5, the drain wiring 6 and a passivation layer 8 successively from the substrate 1 side. On the upper layer of the passivation layer 8 on the intersection of the gate wiring 2 and the drain wiring 6 of the active matrix substrate 1 is formed a capping layer 12 comprising an ITO film of the same layer as a pixel electrode layer.</p> |
