发明名称 Semiconductor device production method
摘要 An entire surface of a semiconductor substrate is coated with photoresist and baked. A circuit pattern area in the region excluding a peripheral region of the semiconductor substrate is subjected to normal exposure while a non-circuit area (photoresist remaining area) in the peripheral region of the semiconductor substrate is subjected to a weak light so that the photoresist will not be removed completely during a development step and the remaining photoresist will have a hydrophilic surface. This improves wettability for a developing solution, enabling to apply the developing solution uniformly over the semiconductor substrate surface. This in turn reduces irregularities of circuit pattern dimensions due to uneven development.
申请公布号 US6331489(B2) 申请公布日期 2001.12.18
申请号 US20000551780 申请日期 2000.04.18
申请人 NEC CORPORATION 发明人 SASAKI TAKAHIRO
分类号 G03F7/20;G03F7/30;G03F7/32;G03F7/38;H01L21/027;H01L21/308;(IPC1-7):H01L21/302;B44C1/22 主分类号 G03F7/20
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