SEMICONDUCTOR WAFER PROCESSING METHOD AND PLASMA ETCHING APPARATUS

摘要

A semiconductor wafer processing method for polishing the surface of a semiconductor wafer with an abrasive cloth sliding on the surface of the semiconductor wafer at a predetermined polishing pressure, characterized in that the polishing pressure on the peripheral portion of the semiconductor wafer is weaker than that on the central portion so that the peripheral portion is raised after the polishing and in that only the peripheral portion is plasma-etched. A plasma etching apparatus characterized in that the diameter of a nozzle ranges from 1 to 2 mm is also disclosed. The entire surface of a semiconductor wafer can be flattened with high precision and high throughput.