| 摘要 |
PROBLEM TO BE SOLVED: To obtain a method having an excellent manufacturing efficiency capable of forming a p-type AlGaN having a low resistance without annealing. SOLUTION: A method for manufacturing a gallium nitride compound semiconductor comprises the steps of forming an n-type impurity-doped n-type AlGaN and then a GaInN films in the presence of an In organic metal material in an organic metal material of aluminum, gallium by an organic metal vapor phase growing method on a sapphire board having a fine ruggedness of a size of protrusions of 30 to 200 nm, then growing a p-type impurity-doped AlGaN in the presence of an In organic metal material in an organic metal material of aluminum and gallium, and cooling in a state in which nitrogen gas and ammonia gas are made to flow. |
