发明名称 SEMICONDUCTOR MANUFACTURING METHOD
摘要 <p>PROBLEM TO BE SOLVED: To make the temperature of a wafer uniform. SOLUTION: An auxiliary heater 3 for compensating for the decrease in the temperature of an end section 1A of a heater 1 is provided at the end section of at least the central side of the resistance heating type heater 1 where power is applied, or an auxiliary heater that is separate from the heater for compensating for the decrease in the temperature at the end section of the heater is connected to the end section of the resistance heating type heater where power is applied.</p>
申请公布号 JP2002203797(A) 申请公布日期 2002.07.19
申请号 JP20010296059 申请日期 2001.09.27
申请人 HITACHI KOKUSAI ELECTRIC INC 发明人 NOMURA HISASHI;TANABE MIKIO;IKEDA FUMIHIDE
分类号 H05B3/10;C23C16/46;H01L21/02;H01L21/205;H01L21/68;H01L21/683;H05B3/68;(IPC1-7):H01L21/205 主分类号 H05B3/10
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