发明名称 |
SEMICONDUCTOR MANUFACTURING METHOD |
摘要 |
<p>PROBLEM TO BE SOLVED: To make the temperature of a wafer uniform. SOLUTION: An auxiliary heater 3 for compensating for the decrease in the temperature of an end section 1A of a heater 1 is provided at the end section of at least the central side of the resistance heating type heater 1 where power is applied, or an auxiliary heater that is separate from the heater for compensating for the decrease in the temperature at the end section of the heater is connected to the end section of the resistance heating type heater where power is applied.</p> |
申请公布号 |
JP2002203797(A) |
申请公布日期 |
2002.07.19 |
申请号 |
JP20010296059 |
申请日期 |
2001.09.27 |
申请人 |
HITACHI KOKUSAI ELECTRIC INC |
发明人 |
NOMURA HISASHI;TANABE MIKIO;IKEDA FUMIHIDE |
分类号 |
H05B3/10;C23C16/46;H01L21/02;H01L21/205;H01L21/68;H01L21/683;H05B3/68;(IPC1-7):H01L21/205 |
主分类号 |
H05B3/10 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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