发明名称 |
Raised sti process for multiple gate ox and sidewall protection on strained Si/SGOI structure with elevated source/drain |
摘要 |
The present invention provides a strained/SGOI structure that includes an active device region of a relaxed SiGe layer, a strained Si layer located atop the relaxed SiGe layer, a raised source/drain region located atop a portion of the strained Si layer, and a stack comprising at least a gate dielectric and a gate polySi located on another portion of the strained Si layer; and a raised trench oxide region surrounding the active device region. The present invention also provides a method of forming such a structure. In the inventive method, the gate dielectric is formed prior to trench isolation formation thereby avoiding many of the problems associated with prior art processes in which the trench oxide is formed prior to gate dielectric formation.
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申请公布号 |
US2006128111(A1) |
申请公布日期 |
2006.06.15 |
申请号 |
US20060351801 |
申请日期 |
2006.02.10 |
申请人 |
INTERNATIONAL BUSINESS MACHINES CORPORATION |
发明人 |
BEINTNER JOCHEN;BRONNER GARY B.;DIVAKARUNI RAMACHANDRA;KIM BYEONG Y. |
分类号 |
H01L21/76;C30B1/00;H01L21/20;H01L21/336;H01L21/36;H01L21/762;H01L29/10;H01L29/51;H01L29/786 |
主分类号 |
H01L21/76 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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