| 摘要 |
A semiconductor device including complementary junction field effect tran sistors (JFETs) manufactured on a silicon on insulator (SOI) wafer is disclo sed. A p- type JFET includes a control gate (170) formed from n-type polysil icon and an n-type JFET includes a control gate (110) formed from .rho.-type polysilicon. The complementary JFETs may include four terminal JFETs having a back gate formed below a channel region. The back gate may be electricall y connected to a control gate formed above a channel region via a cut region in an isolation structure. Furthermore, the complementary JFETs may be form ed on strained silicon formed on a silicon germanium (SiGe) or silicon germa nium carbon (SiGeC) layer, or the like.
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