发明名称 SUBSTRATE TREATING EQUIPMENT AND METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE
摘要 PROBLEM TO BE SOLVED: To enhance throughput while using an inexpensive oxygen concentration measuring instrument by measuring the oxygen concentration of a load lock chamber under a state of reduced pressure in substrate treating equipment equipped with a load lock chamber. SOLUTION: The substrate treating equipment comprises a chamber 1 for treating a substrate 8, a spare chamber 2 connected airtightly to the treating chamber, an exhaust path 15 interconnected with the spare chamber and an exhaust means 13 and at least a portion of which can be isolated airtightly, and an oxygen concentration measuring means 14 connected to the isolable portion 18 of the exhaust path. COPYRIGHT: (C)2008,JPO&INPIT
申请公布号 JP2008210852(A) 申请公布日期 2008.09.11
申请号 JP20070043849 申请日期 2007.02.23
申请人 HITACHI KOKUSAI ELECTRIC INC 发明人 ISHII AKINORI;TAKASHIMA YOSHIKAZU
分类号 H01L21/205;C23C16/44;H01L21/3065;H01L21/677 主分类号 H01L21/205
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