发明名称 |
SUBSTRATE TREATING EQUIPMENT AND METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE |
摘要 |
PROBLEM TO BE SOLVED: To enhance throughput while using an inexpensive oxygen concentration measuring instrument by measuring the oxygen concentration of a load lock chamber under a state of reduced pressure in substrate treating equipment equipped with a load lock chamber. SOLUTION: The substrate treating equipment comprises a chamber 1 for treating a substrate 8, a spare chamber 2 connected airtightly to the treating chamber, an exhaust path 15 interconnected with the spare chamber and an exhaust means 13 and at least a portion of which can be isolated airtightly, and an oxygen concentration measuring means 14 connected to the isolable portion 18 of the exhaust path. COPYRIGHT: (C)2008,JPO&INPIT
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申请公布号 |
JP2008210852(A) |
申请公布日期 |
2008.09.11 |
申请号 |
JP20070043849 |
申请日期 |
2007.02.23 |
申请人 |
HITACHI KOKUSAI ELECTRIC INC |
发明人 |
ISHII AKINORI;TAKASHIMA YOSHIKAZU |
分类号 |
H01L21/205;C23C16/44;H01L21/3065;H01L21/677 |
主分类号 |
H01L21/205 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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