发明名称 Read-Preferred SRAM Cell Design
摘要 A method for operating a static random access memory (SRAM) cell includes providing the SRAM cell having a static read margin and a static write margin, wherein the static read margin is greater than the static write margin; applying a dynamic power to perform a write operation on the SRAM cell; and applying a static power to perform a read operation on the SRAM cell.
申请公布号 US2008316799(A1) 申请公布日期 2008.12.25
申请号 US20080201725 申请日期 2008.08.29
申请人 WANG PING-WEI;MIL YUH-JIER;LIAN HUNG-JEN 发明人 WANG PING-WEI;MIL YUH-JIER;LIAN HUNG-JEN
分类号 G11C11/00;G11C5/14;G11C7/00 主分类号 G11C11/00
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