发明名称 |
Verfahren zur Herstellung eines Halbleitersensors mit aufgehängter bzw. beweglich gehaltener Mikrostruktur |
摘要 |
An MISFET type semiconductor sensor, which can avoid deterioration of characteristics, and a method for fabricating same are disclosed. Silicon oxide films and a silicon nitride film are formed on an upper surface of a p-type silicon substrate, and a movable portion is disposed above the silicon nitride film with a predetermined interval interposed therebetween. A movable gate electrode portion exists on a portion of the movable portion and is displaced by acceleration. Fixed electrodes (a source/drain portion) composed of an impurity diffusion layer are formed on the p-type silicon substrate, and a flowing current changes due to a change in a relative position with the movable gate electrode portion due to acceleration. Projections for movable-range restriction use are provided on a lower surface of the movable portion other than the movable gate electrode portion, and form a gap which is narrower than a gap between the p-type silicon substrate and movable gate electrode portion. |
申请公布号 |
DE19530510(B4) |
申请公布日期 |
2009.06.18 |
申请号 |
DE1995130510 |
申请日期 |
1995.08.18 |
申请人 |
DENSO CORPORATION |
发明人 |
OHTSUKA, YOSHINORI;TAKEUCHI, YUKIHIRO;HATTORI, TADASHI |
分类号 |
B81B3/00;B81C1/00;G01P15/08;G01P15/12;H01L21/306;H01L21/311;H01L29/84 |
主分类号 |
B81B3/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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