| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a nitride semiconductor capable of improving luminous efficiency by energy transition of a 4f inner shell electron in the nitride semiconductor added with rare earth elements. <P>SOLUTION: A nitride semiconductor light-emitting element 11 comprises a substrate 13, a buffer layer 15, a nitride semiconductor layer 16 (clad layer) added with Si, a nitride semiconductor layer 17 (light-emitting layer) added with Eu and Mg as impurities and a nitride semiconductor layer 19 (clad layer) added with Mg. The nitride semiconductor layer 17 is formed, for example, by growing GaN added with Eu and Mg on the nitride semiconductor layer 16 by MBE method using NH<SB POS="POST">3</SB>as a nitrogen source. Concentration of Mg in the nitride semiconductor layer 17 is 3×10<SP POS="POST">18</SP>cm<SP POS="POST">-3</SP>, for example. Concentration of Eu in the nitride semiconductor layer 17 is 2×10<SP POS="POST">20</SP>cm<SP POS="POST">-3</SP>, for example. <P>COPYRIGHT: (C)2013,JPO&INPIT |
