| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device including a metal film having a necessary work function and oxidation resistance at low cost.SOLUTION: A method of manufacturing a semiconductor device includes a step for forming a metal containing film having a structure, obtained by repeatedly laminating a metal nitride film and a metal film, on an insulation film formed on the surface of a substrate by alternately repeating formation of the metal nitride film and formation of the metal film. The metal nitride film is constituted of a substance whose oxidation resistance is higher than in the metal film, the metal film is constituted of the substance having a work function which is higher than in the metal nitride film, and in a step for forming the metal containing film, the metal nitride film is formed first. |
