| 摘要 |
FIELD: electricity.SUBSTANCE: invention relates to photosensitive semiconductor devices operating in infrared part of spectrum, and can be used in designing mono- and multi-element radiation receivers with photosensitive elements on basis of quantum well structure. Photodetector based on structure with quantum wells includes semi-insulating substrate of GaAs, on which are grown heavily doped lower and upper contact layers of GaAs, and between them multiple periods barrier-pit composition AlGaAs-GaAs, in which at boundaries of barrier-pit there are areas of energy of conduction bottom lifting barrier, formed in it AlGaAs, penetrating through multiple periods of barrier-pit between upper and lower contact layers and having characteristic thickness in plane of layers and concentration of alloying admixture such that region of space charge at boundaries with quantum wells distributed over entire thickness of said regions.EFFECT: high operating temperature and, therefore, considerable reduction of requirements to cooling system, reduces power consumption and weigh and overall characteristics of equipment based on it.1 cl, 4 dwg |
