| 发明名称 |
SUBSTRATE FOR SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME |
| 摘要 |
A substrate for semiconductor device includes a substrate, a reaction layer provided on a back surface of the substrate, a transmission preventing metal having a transmittance with respect to red light or infrared light lower than that of the substrate and a material of the substrate being mixed in the reaction layer, and a metal thin film layer formed on a back surface of the reaction layer and formed of the same material as the transmission preventing metal. |
| 申请公布号 |
US2016218017(A1) |
申请公布日期 |
2016.07.28 |
| 申请号 |
US201514922403 |
申请日期 |
2015.10.26 |
| 申请人 |
Mitsubishi Electric Corporation |
发明人 |
NISHIGUCHI Kohei |
| 分类号 |
H01L21/3205;H01L29/20;H01L29/16;H01L21/02;H01L21/225 |
主分类号 |
H01L21/3205 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A substrate for semiconductor device comprising:
a substrate; a reaction layer provided on a back surface of the substrate, a transmission preventing metal having a transmittance with respect to red light or infrared light lower than that of the substrate and a material of the substrate being mixed in the reaction layer; and a metal thin film layer formed on a back surface of the reaction layer and formed of the same material as the transmission preventing metal. |
| 地址 |
Tokyo JP |
