发明名称 |
EVALUATION METHOD FOR CHARGED PARTICLE BEAM LITHOGRAPHY APPARATUS |
摘要 |
PROBLEM TO BE SOLVED: To acquire an appropriate settling time by improving evaluation accuracy of a deflection displacement amount depending on the settling time of a charged particle beam lithography apparatus.SOLUTION: The charged particle beam lithography apparatus uses a deflector that is disposed on an optical path of a charged particle beam, to move an irradiation position of the charged particle beam. An evaluation method for the lithography apparatus includes the steps of: taking a shot of a first pattern; taking a shot of a second pattern by moving the irradiation position from the first pattern in a first direction; taking a shot of a third pattern by moving the irradiation position from the second pattern in the first direction; taking a shot of a fourth pattern between the second pattern and the third pattern by moving the irradiation position from the third pattern in a second direction that is opposite to the first direction; measuring positions of the second pattern and the fourth pattern and calculating an interval between the second pattern and the fourth pattern; and comparing the interval with a reference interval.SELECTED DRAWING: Figure 3 |
申请公布号 |
JP2016149400(A) |
申请公布日期 |
2016.08.18 |
申请号 |
JP20150024309 |
申请日期 |
2015.02.10 |
申请人 |
NUFLARE TECHNOLOGY INC |
发明人 |
HIROSE SATORU;ONISHI TAKAYUKI |
分类号 |
H01L21/027;G03F7/20;H01J37/305 |
主分类号 |
H01L21/027 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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