发明名称 LIGHT TRANSMITTING ELECTRODE FOR LIGHT EMITTING SEMICONDUCTOR ELEMENT AND ITS MANUFACTURE
摘要 PROBLEM TO BE SOLVED: To make it possible of provide light transmitting property and to prevent ball up effectively by providing the first layer comprising Au and the like, which has the light transmitting property and can obtain ohmic contact, and the second layer comprising light transmitting metal oxide such as Mi. SOLUTION: At first, a p-side electrode bonding pad 7 comprising AuBe/Au layer structure is formed on a p-type GaN layer. Then, a first layer 10 comprising Au and a second layer 11 comprising the oxide of Ni are formed only in the region forming the light transmitting electrode on the p-type GaN layer. This thin film has the dark-gray color indicating metal gloss, and the light transmitting property is hardly observed. Then, the substrate undergoes heat treatment in an annealing furnace. The heat treatment is performed at the temperature of 550 deg.C. As atmospheric gas, argon containing oxygen gas of 1% is made to flow, and the heat treatment is performed for 10 minutes. The light transmitting electrode of the taken-out substrate has the dark-gray color with blue tone and indicates the light transmitting property.
申请公布号 JPH10308534(A) 申请公布日期 1998.11.17
申请号 JP19970118315 申请日期 1997.05.08
申请人 SHOWA DENKO KK 发明人 MIKI HISAYUKI;UDAGAWA TAKASHI;OKUYAMA MINEO
分类号 H01L21/28;H01L33/32;H01L33/38;H01L33/42 主分类号 H01L21/28
代理机构 代理人
主权项
地址