| 摘要 |
PURPOSE:To reduce a defective breaking at the step of a wiring without having an adverse effect on electric characteristics including a mesa process by forming an element forming region section and an insulating isolation region section to a semiconductor active layer and making the thickness of the insulating isolation region section thinner than that of the element forming region section. CONSTITUTION:A CVD SiO2 film 14 is grown on a substrate, and phot-resist 15 are left in regions to which a source, a drain and a gate are formed. SiO2 14 is removed while using the photo-resists 15 as masks, and an active layer 13 is mesa-etched by a phosphoric acid-hydrogen peroxide group etching liquid. O<+> is implanted as implantation ions. An implantation layer 16 by an ion implantation reaches up to a buffer layer 12, and the resistance of the implantation layer 16 is increased up to depth of approximately 5,000Angstrom . The photo-resists 15 and the SiO2 film 14 are removed, a recess 20 is formed to a gate section in the same manner as conventional devices, an Al electrode 17 as the gate and source and drain electrodes 18 are shaped, and CVD SiO2 19 is grown in 8,000Angstrom as a passivation film. |
