发明名称 (A) ;CRYSTAL GROWTH OF INGAASP ON INP
摘要 PURPOSE:To improve the insertion loss and specific band width with reduced size, by using >=3 ferrite cores, providing a center conductor between layers and connecting them in series electrically. CONSTITUTION:Three sheets, one set of network center conductors 12a-12c and 12'a-12'c are inserted between two layers consisting of three ferrite cores 6a, 6b and 6c. One end the center conductors 12'a-12'c is grounded and other end is connected between one end of other center conductors 12a-12c and outside of the ferrite cores 6a-6c. Other end of the center conductors 12a-12c is used for the connection of an external circuit. Thus, the inductances consisting of the center conductors 12a-12c, 12'a-12'c are electrically in series connection, allowing to increase the total inductance.
申请公布号 JPS6030121(B2) 申请公布日期 1985.07.15
申请号 JP19800093481 申请日期 1980.07.09
申请人 HITACHI METALS LTD 发明人 TAKEDA SHIGERU;KAWASHIMA MASAHARU
分类号 H01P1/36;H01P1/38;H01P1/383;H03H7/52 主分类号 H01P1/36
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