| 摘要 |
PURPOSE:To enable to upgrade easily the luminous efficiency of a semiconductor laser by a method wherein the state of the surfaces (interfaces of the active layer and the first upper and second lower clad layers) of the first upper clad layer and the second lower clad layer is flattened, and moreover, the optical crystallizability of the clad layers is improved. CONSTITUTION:This semiconductor laser is manufactured from the following processes: a process that a first lower clad layer 20 is formed on the surface of the substrate by making to epitaxially grow at a comparatively lower temperature until the film thickness thereof reaches a proper one and a comparatively thinner first upper clad layer 20a is formed by making to epitaxially grow at a comparatively higher temperature when the film thickness thereof exceeds the desired one; a process that an active layer 30 with a proper film thickness is formed on the surface of the first upper clad layer 20a by making to epitaxially grow at a comparatively higher temperature; and a process that a comparatively thinner second lower clad layer 40a is formed on the surface of the active layer 30 by making to epitaxially grow at a comparatively higher temperature and a second upper clad layer 40 is formed by making to epitaxially grow at a comparatively lower temperature when the film thickness thereof exceeds the prescribed one. |
