发明名称 INPUT-OUTPUT CELL OF CMOS GATE ARRAY
摘要 The CMOS gate array including input-output terminals at the outer sides of the master slice(1) prevents the electrostatic discharge by employing the pull-up/pull-down transistors(24,25). The input/output terminal has the bonding pad(27) and the poly resistor(26) surrounded by the guide ring(29) and the N-channel MOS transistors(20) surrouned by p+ guide ring(28) and P-channel MOS transistors(21) surrounded by the N+guide ring(29).
申请公布号 KR890004676(B1) 申请公布日期 1989.11.24
申请号 KR19870001030 申请日期 1987.02.09
申请人 SAMSUNG ELECTRONICS CO.LTD. 发明人 KIM HON-JUN;CHO WON-JONG
分类号 H03K19/177;(IPC1-7):H03K19/177 主分类号 H03K19/177
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