发明名称 |
INPUT-OUTPUT CELL OF CMOS GATE ARRAY |
摘要 |
The CMOS gate array including input-output terminals at the outer sides of the master slice(1) prevents the electrostatic discharge by employing the pull-up/pull-down transistors(24,25). The input/output terminal has the bonding pad(27) and the poly resistor(26) surrounded by the guide ring(29) and the N-channel MOS transistors(20) surrouned by p+ guide ring(28) and P-channel MOS transistors(21) surrounded by the N+guide ring(29).
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申请公布号 |
KR890004676(B1) |
申请公布日期 |
1989.11.24 |
申请号 |
KR19870001030 |
申请日期 |
1987.02.09 |
申请人 |
SAMSUNG ELECTRONICS CO.LTD. |
发明人 |
KIM HON-JUN;CHO WON-JONG |
分类号 |
H03K19/177;(IPC1-7):H03K19/177 |
主分类号 |
H03K19/177 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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