| 摘要 |
An attenuated phase-shifting mask has a circuit pattern formed of a layer of halftone phase-shifting material, e.g., SiNx, which inherently appears substantially transparent to the visible light utilized to align the mask with a wafer. The reticle alignment marks of the mask are made of a separate substantially opaque layer in order to ensure that the reticle alignment marks will be visible to the mask/wafer alignment equipment.
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