Method for manufacturing T-shaped gate electrodes

摘要

The method for manufacturing T-shaped gate electrodes involves a FET substrate with ohmic contacts being deposited as dielectric to be structured with approximately the same etching rate as the first photo-lacquer layer to be applied at the next step. The photolacquer layer is exposed for defining the gate flux by the exposed structure. The exposed structure is transferred into dielectric underneath by plasma etching. A second photolacquer layer is applied and structured for defining the gate head. Then gate recessing is carried out and the gate metallising is deposited. The gate metallising, the photolacquer, and dielectric are removed outside of the gate region, and a T-shaped gate electrode is exposed.