发明名称 Reflexionsmaske
摘要 A reflection type mask usable to print a pattern upon a semiconductor wafer by use of soft X-rays or otherwise is disclosed. A reflective surface is formed by a multilayered film which is formed on a substrate by layering different materials having different refractive indices in consideration of Bragg diffraction and Fresnel reflection. A non-reflective portion is formed on the reflecting surface to provide a desired pattern. Alternatively, a pattern comprising a multilayered structure may be formed upon a non-reflective substrate. The mask of the present invention assures pattern printing of high contrast.
申请公布号 DE3856054(D1) 申请公布日期 1997.12.04
申请号 DE19883856054 申请日期 1988.02.18
申请人 CANON K.K., TOKIO/TOKYO, JP 发明人 IKEDA, TSUTOMU, ATSUGI-SHI KANAGAWA-KEN, JP;WATANABE, YUTAKA, ATSUGI-SHI KANAGAWA-KEN, JP;SUZUKI, MASAYUKI, ATSUGI-SHI KANAGAWA-KEN, JP;HAYASHIDA, MASAMI, ATSUGI-SHI KANAGAWA-KEN, JP;FUKUDA, YASUAKI, HADANO-SHI KANAGAWA-KEN, JP;OGURA, SHIGETARO, TAMA-SHI TOKYO, JP;IIZUKA, TAKASHI, ATSUGI-SHI KANAGAWA-KEN, JP;NIIBE, MASAHITO, ATSUGI-SHI KANAGAWA-KEN, JP
分类号 G03F1/08;G03F1/14;G03F1/24;G03F1/58;G03F7/20;(IPC1-7):G03F1/00 主分类号 G03F1/08
代理机构 代理人
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