| 发明名称 |
THRESHOLD VALUE ANALYZING SYSTEM AND THRESHOLD VALUE ANALYZING METHOD |
| 摘要 |
PROBLEM TO BE SOLVED: To obtain threshold voltage of all bits in a flash memory by one time processing. SOLUTION: Fail bit map information is examined in order of lower voltage applied to a flash memory. Threshold voltage is decided based on applied voltage at the time of fail of read-out about a bit in which a value read out from a flash memory is initially different from a discriminated value.
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| 申请公布号 |
JP2001312898(A) |
申请公布日期 |
2001.11.09 |
| 申请号 |
JP20000130066 |
申请日期 |
2000.04.28 |
| 申请人 |
MITSUBISHI ELECTRIC CORP;RYODEN SEMICONDUCTOR SYST ENG CORP |
发明人 |
YAMADA SHINJI;MORI OSANARI;FUNAKURA TERUHIKO |
| 分类号 |
G01R31/28;G01R31/319;G06F11/22;G06F12/16;G11C16/34;G11C29/12;G11C29/44;G11C29/50 |
主分类号 |
G01R31/28 |
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