发明名称 |
Electro static discharge protection n-well ballast resistor device |
摘要 |
An n-well resistor device and its method of fabrication. The n-well resistor device of the present invention comprises a first n-type region and a second n-type region formed in an n-type silicon region. A gate dielectric layer formed on said n-type silicon region. A polysilicon gate formed on said gate dielectric.
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申请公布号 |
US2001038128(A1) |
申请公布日期 |
2001.11.08 |
申请号 |
US20010895509 |
申请日期 |
2001.06.29 |
申请人 |
WOOLERY BRUCE;ILKBAHAR ALPER |
发明人 |
WOOLERY BRUCE;ILKBAHAR ALPER |
分类号 |
H01L27/02;H01L27/06;(IPC1-7):H01L23/62 |
主分类号 |
H01L27/02 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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