| 摘要 |
Electrical connection device for forming electrical connection between a first portion and a second portion of a semiconductor device. The first portion is set near or in contact with the second portion. The first and second portions are electrically connected by spraying fine metal particles of gold, nickel or copper in a carrier gas of helium, argon, hydrogen or nitgrogen on the first and second portions to form a metal bump. Prior to spraying the fine metal particles to form the metal bump, hard particles of titanium, copper, hafnium, zirconium or vanadium may be sprayed on the first and second portions to remove contamination layers.
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