SEMICONDUCTOR LASER DEVICE AND ITS MANUFACTURING METHOD

摘要

PURPOSE: To provide a semiconductor laser device of simple constitution which has a small threshold current and small deterioration in temperature characteristics of current-light output characteristics. CONSTITUTION: The device has an n-GaAs substrate 1 of 0.1x1018 cm-3 to 1.5x1018 cm-3 in the impurity concentration of a dopant, an n-type lower clad layer 3 arranged on the substrate 1, a first p-type upper clad layer 5, an n-type current block layer 7 having a first layer 7a which is arranged on the first upper clad layer 5 and close to the first upper clad layer 5 and a second layer 7b which is arranged on the first layer 7a and has higher impurity concentration than the first layer 7a, and a p-type second upper clad layer 8. The diffusion of a p-type dopant from the first upper clad layer 5 to an active layer 4 is suppressed.