发明名称 SEMICONDUCTOR INTEGRATED CIRCUIT DEVICE
摘要 PROBLEM TO BE SOLVED: To improve the electrostatic destruction strength of NC(non-connection) pins in a logic LSI which adopts a master slice system. SOLUTION: In a CMOS gate array, a bonding pad corresponding to a signal input cell and a bonding pad corresponding to a power input cell are constituted of the conductive layers of three layers. A bonding pad corresponding to an I/O cell 3c, which is not used is constituted only of conductive layer 70b of the highest layer. Thus, a film thickness (11) at a lower part in a bonding pad (NC pad) BP, corresponding to an I/O cell 3c which is not used, is thicker than those of the signal bonding pad BP and the power bonding pad BP, and a distance with a semiconductor substrate 1 becomes larger.
申请公布号 JPH113984(A) 申请公布日期 1999.01.06
申请号 JP19970156383 申请日期 1997.06.13
申请人 HITACHI LTD 发明人 NOTO TAKAYUKI;OI EIJI;SHIOTSUKI YAHIRO;KATO KAZUO;OOHAGI HIDEKI
分类号 H01L21/822;H01L21/82;H01L23/485;H01L27/04;H01L27/118 主分类号 H01L21/822
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