| 摘要 |
A data storage unit of a ternary content addressable memory (TCAM) cell is constructed by two twin cells each having DRAM cells of two bits, and complementary data are stored in each of the twin cells. One of storage nodes is selected from each of the twin cells. A comparing circuit compares complementary search data on a search data line pair with the selected stored data. In a DRAM cell, a planar metal-insulator-semiconductor (MIS) transistor is used. According to such configuration, the chip area and cost of a ternary content addressable memory are reduced and high-speed writing is achieved.
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