Test structure for measuring effect of trench isolation on oxide in a memory device

摘要

An apparatus for measuring effects of isolation processes (280) on an oxide layer (286) in a memory device (255) is described. In one embodiment, the apparatus comprises a structure (110) comprised of an array (110c) of memory devices (255). A testing unit (120) is coupled with the structure (110). The testing unit (120) is for performing various electrical tests on the array (110c) of memory devices (255). The testing unit (120) is also for providing data regarding each memory device (255) in the array (110c) of memory devices (255). An analyzer (120) is coupled with the structure (110) for analyzing results of the various electrical tests. This determines the condition of the oxide layer (286) of each memory device (255) in the array of memory devices (110c).