| 摘要 |
A process is provided for fabricating an in-situ sealed integrated vacuum device (30). The process comprises growing an electron emissive material (24) on a cathode layer (14) within a well (22) surrounded by a dielectric (16, 20), and forming, in a vacuum, an anode (32) on the dielectric (16, 20) and above the well (22), thereby encasing the vacuum within the well (22).
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