MICROCHIP AND SOI SUBSTRATE FOR MANUFACTURING MICROCHIP

摘要

Hydrogen ions are implanted on the front plane of a single crystal Si substrate (10), and a hydrogen ion implanted layer is formed on the front layer of the single crystal Si substrate (10). The single crystal Si substrate (10) whereupon the hydrogen ion implanted layer (11) is formed is bonded with a quartz substrate (20) by performing plasma processing and ozone processing to each of the bonding planes for cleaning and activating the surfaces. Then, an impact force is applied to the bonded substrates, a silicon thin film is peeled from a single crystal Si bulk section (13) along the hydrogen ion implanted layer (11), and an SOI substrate having an SOI layer (12) is obtained on the quartz substrate (20). On the front plane of the quartz substrate (20) of the SOI substrate obtained in such manner, recesses such as a hole and a micro flow channel are formed, processing required for a DNA chip and a microfluidics chip is performed, and a silicon semiconductor element for analyzing and evaluating a sample adhered and held in the recess is formed on the SOI layer (12).