发明名称 |
In-situ mask removal in selective area epitaxy using metal organic chemical vapor deposition |
摘要 |
A method for removing a mask in a selective area epitaxy process is provided. The method includes forming a first layer on a substrate and oxidizing the first layer. A patterned photoresist can be formed on the oxidized first layer. A portion of the oxidized first layer can then be removed using a wet chemical etch to form a mask. After removing the patterned photoresist a second layer can be epitaxially grown in a metal organic chemical vapor deposition (MOCVD) chamber or a chemical beam epitaxy (CBE) chamber on a portion of the first layer exposed by the mask. The mask can then be removed the mask in the MOCVD/MBE chamber. The disclosed in-situ mask removal method minimizes both the atmospheric exposure of a growth surface and the number of sample transfers.
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申请公布号 |
US7288423(B2) |
申请公布日期 |
2007.10.30 |
申请号 |
US20060326433 |
申请日期 |
2006.01.06 |
申请人 |
STC.UNM |
发明人 |
HUFFAKER DIANA L.;BIRODAVOLU SANDY |
分类号 |
H01L21/00 |
主分类号 |
H01L21/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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