| 摘要 |
A semiconductor laser diode array and a manufacturing method thereof are provided to reduce a distance between light emitting points to be smaller than 50mum by simplifying an electrode structure of the semiconductor laser diode. A semiconductor laser diode array includes a substrate(101), first to N-th oscillators(110,210,310,410), bonding layers(190,290,390,490), and electrode units(P1-P5). The oscillators are sequentially arranged to be normal with respect to the substrate. The width of the oscillator gets smaller toward an upper portion thereof. The bonding layers have a conductivity property and are applied between the oscillators, such that the oscillators are coupled with each other. The electrode units electrically couple the oscillators with outside. A common electrode of two oscillators is arranged on an exposed portion of the bonding layer. The second to N-th oscillators do not include the substrate. |
