| 发明名称 |
THERMAL PROCESSING IN SILICON |
| 摘要 |
A method is provided for the processing of a device having a crystalline silicon region containing an internal hydrogen source. The method comprises: i) applying encapsulating material to each of the front and rear surfaces of the device to form a lamination; ii) applying pressure to the lamination and heating the lamination to bond the encapsulating material to the device; and iii) cooling the device, where the heating step or cooling step or both are completed under illumination. |
| 申请公布号 |
US2016172213(A1) |
申请公布日期 |
2016.06.16 |
| 申请号 |
US201514905711 |
申请日期 |
2015.07.24 |
| 申请人 |
NEWSOUTH INNOVATIONS PTY LIMITED |
发明人 |
HALLAM Brett Jason;EDWARDS Matthew Bruce;WENHAM Stuart Ross;HAMER Ohillip George;CHAN Catherine Emily;CHONG Chee Mun;LU Pei Hsuan;MAI Ly;SONG Li Hui;SUGIANTO Adeline;MENHAM Alison Maree;XU Guang Qi |
| 分类号 |
H01L21/322;H01L21/324;H01L21/56;H01L21/225 |
主分类号 |
H01L21/322 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A method for the processing of a device, having a crystalline silicon region containing an internal hydrogen source, the method comprising
i) applying encapsulating material to each of the front and rear surfaces of the device to form a lamination; ii) applying pressure to the lamination and heating the lamination under illumination to bond the encapsulating material to the device. |
| 地址 |
Sydney, New South Wales 2052 AU |
