发明名称 |
Light emitting device having undoped GaN layer |
摘要 |
Disclosed is a light emitting device. A light emitting device comprises a plurality of N-type semiconductor layers including a first N-type semiconductor layer and a second N-type semiconductor layer on the first N-type semiconductor layer, an active layer on the second N-type semiconductor layer, and a P-type semiconductor layer on the active layer, wherein the first N-type semiconductor layer comprises a Si doped Nitride layer and the second N-type semiconductor layer comprises a Si doped Nitride layer, and wherein the first and second N-type semiconductor layers have a Si impurity concentration different from each other. |
申请公布号 |
US9379285(B2) |
申请公布日期 |
2016.06.28 |
申请号 |
US201514643777 |
申请日期 |
2015.03.10 |
申请人 |
LG INNOTEK CO., LTD. |
发明人 |
Kim Tae Yun |
分类号 |
H01L33/32;H01L33/12;H01L21/02 |
主分类号 |
H01L33/32 |
代理机构 |
Birch, Stewart, Kolasch & Birch, LLP |
代理人 |
Birch, Stewart, Kolasch & Birch, LLP |
主权项 |
1. A light emitting device comprising:
a substrate; a first undoped GaN layer on the substrate; a first n-type semiconductor layer on the first undoped GaN layer; a second undoped GaN layer on the first n-type semiconductor layer; a second n-type semiconductor layer on the second undoped GaN layer; an active layer on the second n-type semiconductor layer; a p-type semiconductor layer on the active layer; an ohmic electrode layer on the p-type semiconductor layer; and a second electrode on the p-type semiconductor layer. |
地址 |
Seoul KR |