发明名称 THIN FILM TRANSISTOR ARRAY SUBSTRATE, THE METHOD OF THE SAME
摘要 Disclosed is a thin film transistor array substrate, comprising: a substrate; a gate wire formed on the substrate; a wiring insulation layer formed on the gate wire; and a source wire or a data wire, formed on the wiring insulation layer, wherein a semiconductor pattern is formed on a lower portion of the gate wire in an area in which the gate wire is overlapped with the source wire or the data wire. According to the present invention, a problem on step coverage can be resolved.
申请公布号 KR20160080974(A) 申请公布日期 2016.07.08
申请号 KR20140193821 申请日期 2014.12.30
申请人 SAMSUNG DISPLAY CO., LTD. 发明人 PARK, SUN;KIM, JEONG HWAN;JANG, WON HO;JO, JOO HYEON
分类号 H01L29/786 主分类号 H01L29/786
代理机构 代理人
主权项
地址