| 主权项 |
1. A method for manufacturing comprising:
forming a dielectric layer over a silicon cathode; defining a window opening in the dielectric layer through which a portion of the silicon cathode is exposed; forming a recessed region in the silicon cathode through the window opening, the recessed region having a central portion overlapping the window opening, and the recessed region having a peripheral etched undercut portion spaced below the window opening and extending laterally undercutting the dielectric layer; forming a silicide layer within the recessed region, the silicide layer positioned within the peripheral etched undercut portion undercutting the dielectric layer; and forming an anode contact in electrical communication with the silicide layer, the anode contact overlapping the central portion of the recessed region and separated by an undercut part of the dielectric layer from the silicide layer within the peripheral etched undercut portion of the recessed region, wherein the window opening is defined by sidewalls that are concave, wherein the undercut part of the dielectric layer is concave and extends beyond an interface of the dielectric layer and the silicon cathode, and wherein the undercut part is sandwiched between the silicide layer and a diffusion metal layer to separate the diffusion metal layer from silicide layer within the peripheral etched undercut portion of the recessed region, thereby preventing a metal-insulator-semiconductor diode from being formed, wherein the silicon cathode and the dielectric layer interfaced directly and free of any interposed layer. |
