| 摘要 |
PROBLEM TO BE SOLVED: To provide a film deposition device using radicals of high density.SOLUTION: A film deposition device comprises: a vacuum container; a turntable on which a substrate can be placed; a first processing gas supply region 48A provided along a turning direction of the turntable and supplying a first processing gas onto a surface of the turntable; a second processing gas supply region 48B provided apart from the first processing gas supply region 48A along the turning direction of the turntable, and supplying a second processing gas capable of producing a reaction product on the surface of the turntable 2 through reaction on the first processing gas; radical generation means 80 provided adjacently to an outer side wall of the vacuum container across an opening 32 provided in a side wall of the vacuum container communicating with the second processing gas supply region 48, and generating radicals of the second processing gas and also jetting and supplying the radicals of the second processing gas to the second processing gas supply region through the opening 32.SELECTED DRAWING: Figure 2 |
