| 发明名称 |
INFRARED DETECTION ELEMENT |
| 摘要 |
This infrared detection element includes a buffer layer (InAsSb layer) 3, a buffer layer (InAs layer) 4, and a light absorption layer (InAsSb layer) 5. A critical film thickness he of the InAs layer satisfies a relation of hc<t with a thickness t of the InAs layer. In this case, it is possible to improve crystallinities of the buffer layer 4 of InAs and the light absorption layer 5 of InAsSb formed on the buffer layer 3. |
| 申请公布号 |
US2016268461(A1) |
申请公布日期 |
2016.09.15 |
| 申请号 |
US201415033945 |
申请日期 |
2014.10.31 |
| 申请人 |
HAMAMATSU PHOTONICS K.K. |
发明人 |
MISHIMA Asuka;OSHIMURA Yoshinori |
| 分类号 |
H01L31/0304;H01L31/0352;H01L31/0336 |
主分类号 |
H01L31/0304 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. An infrared detection element comprising:
a first InAsSb layer; an InAs layer grown on the first InAsSb layer; and a second InAsSb layer grown on the InAs layer, wherein a critical film thickness hc of the InAs layer and a thickness t of the InAs layer satisfy a relation of hc<t. |
| 地址 |
Hamamatsu-shi,, Shizuoka JP |
