发明名称 PROCESS FOR MANUFACTURING SEMICONDUCTOR WAFER, PROCESS FOR MANUFACTURING SEMICONDUCTOR CHIP, AND IC CARD
摘要 A process for manufacturing semiconductor wafer, comprising the step of integrally forming a plurality of circuit elements (41) on a substrate (1a), the step of forming electrode bumps (11) on electrode pads (11b) electrically connected to the circuit elements (41), the step of forming scribing lines or scribing line marks (21a) at prescribed positions on the substrate (1a), and the step of sticking an anisotropic conductive film (30) to the surface of the substrate (1a) so as to cover the bumps (11) and the scribing lines or scribing line marks (21a). The step of forming the bumps (11) and the step of forming the scribing lines or scribing line marks (21a) are performed simultaneously. It is preferable to form the bumps (11) and the scribing lines or scribing line marks (21a) of gold. This process permits a plurality of circuit elements to be divided as desired even when an anisotropic conductive film is stuck to a semiconductor wafer on which the circuit elements have been formed.
申请公布号 WO9904419(A1) 申请公布日期 1999.01.28
申请号 WO1998JP03048 申请日期 1998.07.06
申请人 ROHM CO., LTD.;HIRAI, MINORU;UEDA, SHIGEYUKI;MIYATA, OSAMU;HORIO, TOMOHARU 发明人 HIRAI, MINORU;UEDA, SHIGEYUKI;MIYATA, OSAMU;HORIO, TOMOHARU
分类号 B42D15/10;H01L21/02;H01L21/301;H01L21/60;H01L23/498;H01L23/544 主分类号 B42D15/10
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